Structure and optical band gap of porous nano-Cu-SiC composite films prepared via magnetron sputtering

Porous nano-Cu-SiC composite films were prepared using double-target co-sputtering technology combined with annealing process by using high-purity copper and SiC as target materials, methane and nitrogen as the reaction gas, and argon as the working gas. The surface morphology, crystal structure, and optical transmission properties of the composite films were characterized and analyzed using modern testing and analytical techniques. The results show that the prepared composite film has a uniform and porous microstructure. Further analysis shows that SiC was dispersed in the copper matrix and well combined with the copper matrix. Annealing was conducive to carrier transmission. After annealing, the composite films recrystallized and grew again, thus increasing the stability of the structure. Raman spectra show that annealing can lead to the separation and crystallization of silicon and carbon phases in composite films. With the increase of energy density, the crystallization degree of porous SiC increases continuously, and the crystallization quality of the composite film and the light transmittance are improved. The prepared porous nano-Cu-SiC composite films have semiconductor properties, and the optical band gap is 0.17 eV. The porous nano-Cu-SiC composite films prepared using this method have good application prospects in high-performance composite film materials, such as heat conduction and wave absorption. •Porous nano-Cu-SiC composite films were prepared by magnetron sputtering and annealing.•Porous nano-Cu-SiC composite films has uniform particle size and distribution pores.•Porous nano-Cu-SiC composite films show semiconductor properties, and the optical band gap is 0.17eV.