Growth and characterization of Sb2(SxSe1-x)3 thin films prepared by chemical-molecular beam deposition for solar cell applications

•Deposition technology for antimony sulfide selenide (Sb2(SxSe1-x)3) thin films.•Sb2(SxSe1-x)3 thin films obtained by the chemical molecular beam deposition method.•Band gap of Sb2(SxSe1-x)3 was 1.2–1.36 eV by varying S/(S+Se) ratio from 0.03 to 0.08.•Changing the ratio shifts peaks toward a higher 2θ angle (+0.15°). Antimony sulfide selenide, Sb2(SxSe1-x)3 (x = 0–1), is a tunable bandgap compound that combines the advantages of antimony sulfide (Sb2S3) and antimony selenide (Sb2Se3). This material shows great potential as a light-absorbing material for low-cost, low-toxicity, and highly stable thin-film solar cells. In this study, Sb2(SxSe1-x)3 thin films were deposited by chemical-molecular beam deposition on soda-lime glass substrates using antimony (Sb), selenium (Se), and sulfur (S) precursors at a substrate temperature of 420 °C. By independently controlling the source temperatures of Sb, Se, and S, Sb2(SxSe1-x)3 thin films with varying component ratios were obtained. Scanning electron microscopy revealed significant changes in the surface morphology of the films depending on the elemental ratio of [S]/([S]+[Se]). Crystallites shaped like cylindrical microrods with d = 0.5–2 µm diameter and l = 3–5 µm length were grown at a certain angle on the substrate. X-ray diffraction patterns showed peaks corresponding to the orthorhombic structures of Sb2Se3, Sb2S3 and their ternary compounds Sb2(SxSe1-x)3. The optical characterization revealed a high absorption coefficient of 105 cm−1 in the visible and near-infrared light regions. The band gap of the compounds changed almost linearly from 1.2 eV to 1.36 eV with a change in the ratio of elements [S]/([S]+[Se]) from 0.03 to 0.08.