Precursor mediated and defect engineered ZnO nanostructures using thermal chemical vapor deposition for green light emission

•Modulation of Zn vacancies in ZnO nanostructured thin films.•Exciton energy of ∼ 30 meV for these nanostructured thin films.•Zn vacancy mediated green light emission in these nanostructures.•Interplay between Zn vacancy and electronic properties in these nanostructures. We used thermal chemical vapour deposition to synthesize zinc oxide nanostructured thin films on n-type silicon substrate using zinc oxide (ZnO) and zinc chloride (ZnCl2) powder precursors in conjunction with bulk graphite powder. The synthesized ZnO nanostructured thin films structures are polycrystalline with a relatively enhanced c-axis orientation for ZnO powder precursor with respect to that of ZnCl2 precursor. The scanning electron microscopic analysis substantiate the higher c-axis orientation of ZnO nanostructures, grown using ZnO powder precursor. The photoluminescence (PL) and UV–Vis measurements suggest the presence of zinc vacancies, causing the green emission from both nanostructured thin films. The measured bandgap of ZnO nanostructured thin film using ZnO powder precursor is slightly higher than that of ZnCl2 powder precursor. The capacitance-voltage and Mott-Schottky measurements showed the n-type characteristics with 6.3 × 1016 cm−3 and 2.7 × 1015 cm−3 carrier densities for ZnO nanostructured thin films prepared using ZnO and ZnCl2 precursors, respectively. The current-voltage measurements showed relatively lower current for ZnO nanostructured thin films, synthesized using ZnCl2 precursor, signifying the presence of zinc vacancies trap sites and is also consistent with Mott-Schottky measurements, showing lower carrier concentrations with respect to that of ZnO precursor derived ZnO nanostructured thin films. Thus, controlled Zn vacancies in ZnO nanostructured thin films may lead to the efficient green light emitters, useful for green light colour emission applications.