Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition

•Electron irradiation of as-deposited LiF films resulted in surface defects from aggregates.•Aggregate defects not observed for electron irradiation of growing LiF films.•Technology for producing epitaxial films with (111) orientation was developed.•Surface reconstruction occurred for LiF films irradiated during their growth process. A comparative study of the formation of defects on the surface of growing and formed lithium fluoride films under irradiation with low-energy electrons by total current spectroscopy has been carried out. It is shown that, in the post case, the aggregation of F2+-, F2-, F3-, and X-centres proceeds by coalescence of F-centres. In situ process, due to the renewal of the surface with a new layer, large defects are not observed, but a high concentration of laser color centers is formed. Electron irradiation and negative potential treatment during film growth can be used as a technology for producing epitaxial films with the (111) orientation.