AC-driven QLED based on far-field effect of Au NPs

As the pixel size continues to shrink, conventional display devices are unable to satisfy the increasing demand. Therefore, a novel light-emitting device has garnered significant attention. This device emitted light under an alternating current (AC) electric field and blocked the injection of external carriers by using the insulating layer. However, at the same time, this approach leads to a reduction in brightness. In this paper, we have realized the performance enhancement of AC-driven QLEDs by incorporating Au NPs of different sizes in PEDOT:PSS. Our investigation reveals that Au NPs of greater size exhibit a notable enhancement of the brightness, rising from 5512 cd/m2 to 7234 cd/m2, representing a substantial increase of approximately 31.2 %. It demonstrates the great potential of the "far-field" effect in AC-driven QLEDs. •The fabrication of hole generating layer based AC light emitting diode.•The 32.1 % brightness enhancement by adding Au NPs.•The feasibility of the far field enhancement effect in AC light emitting devices is demonstrated.