Spin thermoelectric and spin transport in YIG films fabricated by chemical method

Spin transport in heterojunctions between magnetic insulators and heavy metals has garnered significant attention due to its potential in spintronics applications. In this study, we employed the metal-organic decomposition (MOD) method to fabricate high-quality yttrium iron garnet (Y3Fe5O12-YIG) films on (111)-oriented gadolinium gallium iron garnet (Gd3Ga5O12-GGG) substrate. We conducted a thorough characterization of the crystallinity, surface morphology, and magnetic properties of the YIG films at various thicknesses. The obtained samples exhibited smooth surfaces with roughness mean-square (RMS) below 0.6 nm. Epitaxial growth was maintained for films up to 116 nm in thickness but deteriorated beyond that. The magnetic anisotropy demonstrated an easy axis in the in-plane direction, accompanied by a low coercivity of 4.8 ± 0.4 Oe. The spin Seebeck effect voltage measurement shows the highest signal for 366 nm thick film and is reduced if the thickness increases. Furthermore, we investigated spin transport across the YIG/Pt interface using spin Hall magnetoresistance. The average spin-mixing conductance (Gr) was determined to be 5.79 ± 0.54 × 1014 Ω−1m−2, a value comparable to those reported in previous studies. [Display omitted]