Improvement of SiO2 surface morphology during the selective Si3N4 etching in the multi-layered 3D NAND Si3N4/SiO2 stack structures by the generation of CO2 gas through the control of redox reaction

Improvement of SiO2 surface morphology during the selective Si3N4 etching in the multi-layered 3D NAND Si3N4/SiO2 stack structures by the generation of CO2 gas through the control of redox reaction

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Veröffentlicht in:Surfaces and interfaces 2022-12, Vol.35, p.102484, Article 102484
Hauptverfasser: Kim, Taehyeon, Park, Taegun, Son, Changjin, Lim, Sangwoo
Format: Artikel
Sprache:eng
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ISSN:2468-0230
DOI:10.1016/j.surfin.2022.102484