Novel and promising material (CuInSn3S8) for photovoltaic and optoelectronic applications

Novel thin films of CuInSn3S8 (CISS8) have been synthesized using the spray pyrolysis approach. This is the first time to prepare such interesting material which could be an up-and-coming candidate in the transparent conductive thin films family. Basic characterizations have been employed to inspect the nature and morphology of the deposited films. The film's surface is quite uniform and homogeneous. Also, they are polycrystalline with a monoclinic structure. Furthermore, the network topology of CuInSn3S8 material has been investigated to understand its compactness nature. This has been achieved through evaluating several interesting indices such as density, molar volume, free volume percentage, packing density, compactness, and lone-pair of electrons. In addition, linear/nonlinear optical and optoelectrical properties have been studied. Films have revealed a wide energy gap that varies between (3.86 and 3.79 eV) with the direct optical transition. Moreover, they have presented high infrared reflectance, adequate optical transmittance within the visible spectrum, and the tendency of being n-type semiconductors. Besides, films have exhibited high values of optical conductivity and nonlinear optical parameters. A satisfactory linkage has been made betwixt all of the determined indices either the structural, network topology, and optical/optoelectrical ones. The obtained findings refer to the rising of a new star on the horizon of photovoltaic and optoelectronic applications fields.