Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs

•Thermal coupling effects between side-by-side UTBB FD-SOI nFETs.•Heat originated from a neighbor device operation degrades device characteristics.•Digital and analog figures of merit degraded by this temperature rise. This work studies the thermal cross-coupling between two side-by-side UTBB (ultra-thin body and ultra-thin BOX) fully-depleted Silicon-on-Insulator (FD-SOI) MOSFETs. Due to the operation (i.e. heating) of the neighbor (actuator) device, the temperature of the measured device increases, which deteriorates its electrical parameters. This degradation is studied as a function of the bias applied to (i.e. power dissipated by) the neighbor device on main digital (SS, VTh and Ion/Ioff) and analog (gm, gm/Id and Av) Figures of Merit as well as the 2nd and 3rd order harmonic distortions (HD2 and HD3).