Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model

With the maturity of CMOS technologies and their use for various digital, analog and RF applications, some additional effects must be modeled or enhanced to improve the accuracy of SPICE models. Non-Quasi-Static (NQS) effect is one of them; this paper proposes here to present a pragmatic NQS approach adapted to L-UTSOI model and compared to TCAD simulation, segmented model and experimental data. •Review of different techniques, which are the main motivation of the choice of NQS-RTA approach.•New physical insights included in L-UTSOI model version relative to NQS effect.•NQS-RTA solution is formally illustrated, discussed and compared with TCAD, segmented case and experimental datas.