Bias dependent physics-based model of low-frequency noise for nanowire type gate-all-around MOSFETs

•The low-frequency noise in nanowire type GAA MOSFETs was physically modeled.•The inversion carrier density was calculated according to the gate and drain bias.•The developed model can accurately LFN according to gate and drain voltages.•The model could help circuit designers to optimize noise performance. In this study, the bias dependence of low-frequency noise (LFN) in nanowire type gate-all-around (GAA) MOSFETs was physically modeled. In the model, the inversion carrier density distribution was considered based on the potential in the channel that changes according to the bias. The developed model was verified with measurement data of the fabricated device. The model could help circuit designers to optimize noise performance in analog/RF applications when designing integrated circuits using nanowire-type GAA MOSFETs.