Deep depletion capacitance–voltage technique for spatial distribution of traps across the substrate in MOS structures
•This study extracted the spatial distribution of traps from devices with MOS structure.•At this time, we used the capacitance–voltage (C–V) characteristics of the state of depletion and the C–V characteristics of the state of deep-depletion to expand the region of depletion.•The result is that the...
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Veröffentlicht in: | Solid-state electronics 2020-11, Vol.173, p.107905, Article 107905 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | •This study extracted the spatial distribution of traps from devices with MOS structure.•At this time, we used the capacitance–voltage (C–V) characteristics of the state of depletion and the C–V characteristics of the state of deep-depletion to expand the region of depletion.•The result is that the trap distribution was extracted according to the position in the vertical direction, which is based on separating the interface trap and subgap density-of-state from the FET device with the MOS structure.
It is important to characterize the distribution of spatial traps in the MOS structure for separating the interface states from the subgap density-of-states. In this study, we report a characterization technique for the spatial distribution of traps using the C-V characteristics under deep-depletion bias. Depletion capacitance is determined by the depletion depth (Xd) and the dielectric constant with the MOS structure. Thus, the distribution of spatial depletion charges can be identified if only the depletion capacitance can be separated from the measured gate capacitance. In the case of MOS structure with spatial traps in the element, it will show a deviated characteristic from the ideal depletion capacitance. Therefore, this allows us to characterize the spatial distribution of traps in MOS structures. The spatial distribution of traps from a single crystal silicon MOS capacitor was extracted Ntrap,max = 3.45 × 1018 cm−3 ass the maximum value in the interface, indicating that the concentration tends to decrease more in the substrate direction. |
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ISSN: | 0038-1101 1879-2405 |
DOI: | 10.1016/j.sse.2020.107905 |