Bulk n-channel MOSFETs with buried stressor at the 28 nm process node

•n-Channel MOSFETs with SiGe buried stressor fabricated in a 28 nm node foundry process.•Elastic edge relaxation of a buried SiGe stressor by shallow trench isolation.•Improved short channel effect (reduced DIBL) measured and attributed to buried SiGe.•15% Improvement in measured linear drain current (Idlin) without tensile strain.•Pseudomorphic epitaxial SiGe:Si grown by reduced-pressure chemical vapor deposition. We report for the first time the implementation of SiGe buried stressors in a foundry production process at 28 nm and the observation of an additional benefit of improved short channel behavior (reduced DIBL) that results in at least 15% improvement in Idlin-Ioff independent of any benefit obtained from tensile strain. For RF applications, fT is projected to improve by at least 40% in n-MOSFETs with SiGe buried stressor.