Implementation of homeostasis functionality in neuron circuit using double-gate device for spiking neural network

•We propose a neuron circuit using the double-gate MOSFET that controls the fire rate of the neuron circuit.•The threshold voltage change (Vth) of the double-gate MOSFET is investigated as a parameter of the gate bias (VG2).•Also, a homeostasis circuit for controlling VG2 of the double-gate MOSFET is proposed.•The operation of the homeostasis functionality is demonstrated through the circuit-simulation of the proposed multi-neurons system.•Finally, we demonstrate the immunity to variations of the synaptic devices and neuron circuits through the simulation of a 2-layer SNN based on the proposed neuron circuit. The homeostatic neuron circuit using a double-gate MOSFET is proposed to imitate a homeostasis functionality of a biological neuron in spiking neural networks (SNN) based on a spike-timing dependent plasticity (STDP). The threshold voltage (Vth) of the double-gate MOSFET is controlled by independent two-gate biases (VG1 and VG2). By using Vth change of the double-gate MOSFET in the neuron circuits, the fire rate of the output neuron is controlled. The homeostasis functionality is implemented by the operation of multi-neuron system based on the proposed neuron circuit. Through the SNN based on STDP using MNIST datasets, it is demonstrated that the recognition rate (~91%) of the SNN with the proposed homeostasis functionality is higher than that (~79%) of the SNN without the proposed homeostasis functionality. Also, the results of the recognition rate with the variations (σ/μ