On the DC extraction of the asymmetric parasitic source and drain resistances for MOSFETs

•A simple DC method is presented to extract the difference between the drain and source series resistance of MOSFETs.•This method is valid for any three- or four-terminal MOSFET and it can be used in linear, triode or saturation region.•An integration-based method is also proposed to extract the drain resistance and the source resistance of thin-film MOSFETs.•Measured and simulated data are used to verify the applicability of both proposed methods. Two different parameter extraction methods are proposed in this article. First, a simple DC method is presented to extract the difference between the drain and source series resistance of MOSFETs. This method is valid for any three- or four-terminal MOSFET and it can be used in linear, triode or saturation region. Second, an integration-based method is proposed to extract the drain resistance and the source resistance of thin-film MOSFETs. Both methods were tested using simulated and measured data of two different devices: zinc oxide (ZnO) and polysilicon TFTs.