Arsenic-doped HgCdTe: FTIR photoluminescence and photoreflectance spectroscopy study
Photoluminescence (PL) and photoreflectance (PR) spectroscopy were used for the optical study of arsenic doping of HgCdTe grown by molecular beam epitaxy (MBE). Un-doped and arsenic-doped material with cadmium telluride molar fraction x = 0.29 grown under similar conditions and subjected to similar...
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Veröffentlicht in: | Solid state communications 2024-12, Vol.394, p.115720, Article 115720 |
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Sprache: | eng |
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Zusammenfassung: | Photoluminescence (PL) and photoreflectance (PR) spectroscopy were used for the optical study of arsenic doping of HgCdTe grown by molecular beam epitaxy (MBE). Un-doped and arsenic-doped material with cadmium telluride molar fraction x = 0.29 grown under similar conditions and subjected to similar types of annealing was studied. The PL spectra of the un-doped material featured signatures of intrinsic defects associated with mercury vacancy, excessive tellurium, and related complexes. In the arsenic-doped material, optical signatures of these defects appeared to be suppressed. After arsenic activation, shallow (7–8 meV) acceptor levels were found in the material. These were attributed to the dopant activation, which was confirmed with electrical studies showing p-type conductivity with hole concentration ∼1016 cm−3. The studies showed that the actual pattern of arsenic doping in HgCdTe can be indeed screened by intrinsic defects, which are inherent to MBE-grown HgCdTe and tend to interact with the dopant.
•Un-doped and arsenic-doped HgCdTe films were grown with molecular-beam epitaxy on Si substrates.•Photoluminescence (PL) and photoreflectance (PR) techniques were used for the optical study of the material.•The PL spectra of un-doped material featured signatures of mercury vacancy, excessive tellurium, and related complexes.•In arsenic-activated films, dopant-related shallow (7–8 meV) acceptor levels were found. |
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ISSN: | 0038-1098 |
DOI: | 10.1016/j.ssc.2024.115720 |