Effect of temperature variations on the behavior of a two-terminal organic–inorganic halide perovskite rewritable memristor for neuromorphic operations

Emulation of biological signal processing, learning and memory functions is essential for the development of artificial learning circuitry. Here, we report on the fabrication of organic–inorganic hybrid perovskite based two-terminal rewritable memristor for neuromorphic operations. We investigated the temperature variations in the current-voltage (I–V) characteristics behavior of a two-terminal organic–inorganic perovskite – graphene oxide rewritable memristor in planar geometry. The resistance switching effect has been found to have a switching time of ∼40 ns and it is more pronounced at temperatures below 250 K, then ionic conductivity freezes and electron transport predominates. This effect is observed at both: positive and negative voltages and the hysteresis of the I-Vs decreases significantly at T