Electronic mobility limited by optical phonons in symmetric MgxZn1-xO/ZnO quantum wells with mixed phases

Electronic mobility limited by optical phonons in symmetric MgxZn1-xO/ZnO quantum wells with mixed phases

In symmetric MgxZn1-xO/ZnO quantum wells (QWs), which are the basic structures of high electronic mobility transistors (HEMTs), the electron states and optical phonon modes are clarified with the dielectric continuum model, uniaxial model, and force balance equation. Then, the electronic mobility af...

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Veröffentlicht in:Superlattices and microstructures 2021-02, Vol.150, p.106782, Article 106782
Hauptverfasser: Zan, Y.H., Ban, S.L.
Format: Artikel
Sprache:eng
Schlagworte:
Electronic mobility
MgxZn1-xO/ZnO/MgxZn1-xO quantum well
Mixed phases
Ternary mixed crystal
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Zusammenfassung:In symmetric MgxZn1-xO/ZnO quantum wells (QWs), which are the basic structures of high electronic mobility transistors (HEMTs), the electron states and optical phonon modes are clarified with the dielectric continuum model, uniaxial model, and force balance equation. Then, the electronic mobility affected by optical phonons is obtained around room temperature by a weight model combined with Lei-Ting's force-balance equation, in consideration of mixed phases in MgxZn1-xO (0.37
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2020.106782