Universal interface engineering method for applying transition metal oxides in silicon heterojunction solar cell

Transition metal oxide (TMO) thin films exhibit large bandgap and hold great potential for enhancing the performance of silicon heterojunction (SHJ) solar cells by increasing the short-circuit current density significantly. On the other hand, achieving precise control over the electrical properties of TMO layers is crucial for optimizing their function as efficient carrier-selective layer. This study demonstrates a general and feasible approach for manipulating the quality of several TMO films, aimed at enhancing their applicability in silicon heterojunction (SHJ) solar cells. The core of our method involves precise engineering of the interface between the TMO film and the underlying hydrogenated intrinsic amorphous silicon passivation layer by managing the reaction of the TMO on the surface. X-ray photoelectron spectroscopy spectra demonstrate that our methods can modify the oxygen content in TMO films, thereby adjusting their electronic properties. By applying this method, we have successfully fabricated WOx-based SHJ solar cells with 23.30 % conversion efficiency and V2Ox-based SHJ solar cells with 22.04 % conversion efficiency, while keeping n-type silicon-based electron-transport layer at the rear side. This research paves the way for extending such interface engineering methods to other TMO materials used as hole-transport layers in SHJ solar cells. •Controlling the TMO/(i)a-Si:H interface using three methods: noPT, PT, and PTB.•PT method preserves oxygen content in TMO layers better than PTB and noPT methods.•PTB method maintains optimal TMO oxygen content regarding conversion efficiency.•PTB method enables 23.30 % efficiency and 80.80 % FF in WOx-based SHJ solar cells.•PTB method enables 22.04 % efficiency and 74.88 % FF in V2Ox-based SHJ solar cells.