Exploring hafnium oxide's potential for passivating contacts for silicon solar cells

Exploring hafnium oxide's potential for passivating contacts for silicon solar cells

We investigate the potential of ultra-thin HfO2 films grown by atomic layer deposition for passivating contacts to silicon focusing on variations in film thickness and post-deposition annealing temperature. A peak in passivation quality – as assessed by carrier lifetime measurements – is reported fo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Solar energy materials and solar cells 2023-08, Vol.259, p.112457, Article 112457
Hauptverfasser: Wratten, A., Pain, S.L., Yadav, A., Khorani, E., Niewelt, T., Black, L., Bartholazzi, G., Walker, D., Grant, N.E., Murphy, J.D.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic layer deposition
Contact
HfO2
Passivation
Silicon
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We investigate the potential of ultra-thin HfO2 films grown by atomic layer deposition for passivating contacts to silicon focusing on variations in film thickness and post-deposition annealing temperature. A peak in passivation quality – as assessed by carrier lifetime measurements – is reported for 2.2 nm thick films annealed at 475 °C, for which a surface recombination velocity
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2023.112457