Influence of N-doped aluminosilicate as an electrolyte on the properties of all-solid-state electrochromic devices

As an optical property with excellent dielectric properties combined with antireflection, AlSiON is not currently being investigated as electrochromic devices. Based on the optimized Al3+ solid-state electrolyte Al2SiO5, which is doped with different levels of N elements, the opto-electrical properties of the formed AlSiON in electrochromic devices have been systematically examined. AlSiON with an N-doping ratio of 3.4% achieves outstanding optical modulation (58.17%) and switching speed (22.2 s for coloring and 3.5 s for bleaching), as well as an effective reduction of leakage currents (68.39 μA/cm2) in electrochromic devices. By XPS analysis, the N content of 3.4% AlSiON is internally bonded with a proportion of Si–N to Al–N bonds, which generates a dielectric high Si3N4 composition effectively blocking electron breakdown. •The opto-electrical properties of AlSiON synthesized based on Al2SiO5 further doped with N elements as an electrolyte for electrochromic devices were investigated for the first time and good electrochromic properties were obtained, broadening the system for the Al ionic electrolyte system.•The doping of N elements improves the dielectric properties of the AlSiON electrolyte, effectively blocking the leakage current and limiting the electron conduction rate to within the order of 10−11 S/cm, while also increasing the number of transferred charges in AlSiON. The electron leakage from electrochromic devices is alleviated.•The AlSiON ionic conductor device with an N content of 3.4 at.% achieved an optical modulation amplitude of 58.15 %, a coloring time of 22.2 s, a bleaching time of 3.5 s, and reduced the leakage current to 68.39 μA, with only a 9 % decrease in the optical modulation amplitude after 640 cycles.