One-step solvothermal synthesis of Zn2SnO4/rGO composite material and highly gas sensing performance to acetone

In this study, one-step solvothermal method was employed to synthesize Zn2SnO4 and Zn2SnO4/rGO composites. Zn2SnO4 was bonded to the rGO surface or in the spaces between the lamellar layers to create a semiconductor composite material that is physically supported by heterojunction. Compared to Zn2SnO4 sensor, the Zn2SnO4/rGO sensing material exhibits superior gas-sensing properties to acetone. The optimal temperature of Zn2SnO4/rGO sensor was just 200 °C, while its sensitivity to 100 ppm acetone gas was up to 11.2. Its response and recovery times were only 8 s and 11 s, respectively. The large specific surface area and distinctive heterojunction of the composite material are responsible for the enhanced gas-sensing performance of Zn2SnO4/rGO sensing material. Zn2SnO4/rGO is an ideal sensing material due to high sensitivity, fast response/recovery properties, great selectivity, and stability. Schematic diagram showing energy band structure and electron transfer in Zn2SnO4/rGO.; Acetone sensing mechanism of Zn2SnO4/rGO. [Display omitted] •Zn2SnO4/rGO based acetone gas sensing device was fabricated by one-step solvothermal method.•Zn2SnO4/rGO showed high response, short response and recovery time, good repeatability to acetone gas.•The p-n heterojunction effect between Zn2SnO4 and rGO facilitates the electron transfer among gas molecules.