Structural, complex dielectric, Ac conductivity and impedance properties of Mn3-xCrxTeO6 (x = 0.02, 0.04, 0.06 and 0.08) compounds

In this communication, the synthesis of polycrystalline Mn3-xCrxTeO6 (MCTO) (x = 0.02, 0.04, 0.06 and 0.08) compounds is carried out using the standard high-temperature solid-state reaction (SSR) method. The X-ray Diffraction (XRD) technique revealed the trigonal (hexagonal axes) crystal structure of MCTO compounds. The doping of Chromium (Cr) on the Mn site does not affect the structure of the compound. The compositional purity and morphological observations are also investigated. Dielectric parameters are examined throughout a wide frequency range. Detailed investigation obtained by theoretical fitting of the cole-cole model revealing a non-Debye type relaxation mechanism which is also evident from the complex modulus studies. An investigation on electrical conductivity is carried out by conceptually fitting experimental data using a power law and indicates a Correlated Barrier Hopping mechanism in MCTO compounds as the cause of conduction. The resistance and capacitance were validated by impedance analysis, and the effect of grains and grain boundaries was also studied accordingly. In-depth, this study demonstrates an effective synthesis approach and a thorough examination of Cr-doped Mn3TeO6 multiferroic compounds, potentially providing fundamental attributes to investigate their applications in various fields of multiferroics. [Display omitted] •The structural and dielectric properties of Cr doped Mn3TeO6 compound have not been previously studied.•The dielectric relaxation mechanism was investigated with the Cole - Cole relaxation model, and detailed electrical properties are discussed.•The impedance analysis and fitting results of the equivalent circuit model explained.•The conduction process is governed by CBH (Correlated Barrier Hopping) conduction mechanism.