Stark shift of binding energy for on and off-center donor impurities in quantum rings under the influence of charged rods electric fields

In the present work, we study the stark shift of binding energy for a Hydrogenic donor impurity confined within a circular quantum ring composed from three different semiconducting heterostructures AlxGa1-xN/GaN, InxGa1-xN/GaN, Ga1−xAlxAs/GaAs under the electric fields along different directions. We supplied a position-dependent electric field by using a charged rod of radius ‘a' and charge density λ. By placing the charged rod and donor impurity in different positions, we have studied the changes in the on and off-center donor binding energies, system energy levels, probability densities, average position of the electron, and the probability finding electron inside the quantum ring. We describe the redshift and blueshift of the donor impurity binding energy when different parameters change. Panels (A) to (I) show the contour plots of nine lowest energy probability densities of a quantum ring with an off center donor impurity at the position xI = yI = 7.5 nm and on-center electric field. [Display omitted] •Stark shift of donor impurity binding energy of c AlxGa1-xN/GaN, InxGa1-xN/GaN, Ga1−xAlxAs/GaAs quantum rings.•Effect of position-dependent electric field by using a charged rod of radius ‘a' and charge density λ.•Describing the redshift and blueshift of the donor impurity binding energy by changing different parameters.•Larger values of the shark shift by coinciding the positions of the impurity and the charged rod.•Probability density localization and distribution by using the applied electric field and material type.