Design and simulation of BeSiP2-based high-performance solar cell and photosensor

•BeSiP2-based solar cell and photosensor have been designed and computed.•BeSiP2 solar cell shows a PCE=29.83 % with JSC=34.44 mA/cm2, VOC=0.99 V, FF=87.45 %•BeSiP2-based photosensor shows an R=0.64 A/W andD∗ = 3.63 × 1016 Jones, respectively.•BeSiP2-based structure exhibits potential both in solar cell and photodetector devices. This research composition provides a novel as well as non-toxic chalcopyrite-category BeSiP2 (BSP) compound-based structure that is inspected by a solar cell capacitance simulator software (SCAPS-1D) and this structure can be used for both solar cell (SC) and photosensor (PS) industries. In this structure, indium sulphide (In2S3) and molybdenum sulphide (MoS2) are exploited as window and back surface field (BSF) layers. By arranging the BSP-based photonic (photosensor and solar cell) structure, the optimized condition of different layers has been determined. Without the MoS2 layer, the value of SC and PS performance parameters are JSC of 29.75 mA/cm2, VOC of 0.84 V, FF of 83.96 %, PCE of 20.97 %, R of 0.51 AW−1 and D* of 1.68 × 1015 Jones. But with a thin MoS2 layer, the SC and PS performance parameters of the BSP compound-based photonic gadget (PG) progress meaningfully. The progress of SC and PS parameters are JSC of 34.44 mA/cm2, VOC of 0.99 V, FF of 87.45 %, PCE of 29.83 %, R of 0.64 AW−1 and D∗ of 3.63 × 1016 Jones, separately. These findings exhibit that BSP-based structure can be used for both solar cell and photodetector devices, which could be highly efficient and cost-effective fabrication in photonic industries.