Exploration of the broadband photodetection feasibility of BiCuOS based heterostructure

Optoelectronics and sensing devices play a significant role in modern society, driving the research community to explore advanced semiconducting materials and device architecture with low energy consumption. Quaternary rare-earth copper oxychalcogenides have garnered substantial attention owing to their potential use as p-type semiconductors. In the present work, layered bismuth copper-oxysulfide (BiCuOS) is synthesized by a low-temperature hydrothermal reaction. Successful material synthesis is asserted using X-ray diffraction, Raman, and X-ray Photoelectron spectroscopic studies. The BiCuOS semiconductor showed p-type character with an observed indirect bandgap of 1.05 eV. We further developed an n-Si/BiCuOS/p-CuI heterojunction photodetector with an impressive response time of milliseconds. It possessed a remarkable spectral detectivity of 2.7 × 109 Jones in the red light of 620 nm under self-powered conditions and a capable detection over the 405−850 nm wavelength range. The proposed Si/BiCuOS/p-CuI heterojunction is expected to have great potential for broadband light detection applications as high-performance devices. [Display omitted] •Successful synthesis of layered BiCuOS through hydrothermal technique.•A self-powered hybrid photodetector with response times of 100–300 ms.•Broadband photodetection in the Vis-NIR range has been effectively achieved.•Pyroelectric actions enhance photocurrent in 850 nm IR detections.