Cu3N thin film synthesized by selective in situ substrate heating during high power impulse magnetron sputtering for augmenting UV photodetection

Copper Nitride (Cu3N) thin film has significant optoelectronic properties useful in various applications such as photodetection, lithium-ion batteries etc. In this study, we extend our work on the use of High Power Impulse Magnetron Sputtering (HiPIMS) for the deposition of Cu3N films at various substrate temperatures for the application of high-performance UV photodetectors. The resultant sample exhibits perfect stoichiometry of Cu3N with the orientation of the Cu3N (100) crystal plane. The effect of substrate temperature on the photodetection performance has great significance and is analyzed and discussed in detail. The high crystallinity of resultant Cu3N is due to the reduction in the defects, which increases the crystallite size. The newly designed UV photodetector presents remarkable properties. At 150 °C substrate temperature, the high photocurrent and photosensitivity of 34.3 × 10−8 A and 6035%, respectively, are achieved. An ultrafast photo response and recovery of 6.5 s and 12 s, respectively, were observed during the on/off switching of UV light. The device outperforms due to its high stability for around 30 days. High crystallinity of resultant Cu3N attributes to the reduction in the defects, which increases the crystallite size. Improvement in optoelectronic properties led to the formation of a single layer Cu3N thin films for fabricating UV photodetectors. Based on the outcomes, Cu3N thin films have great potential to be applied as high-performance UV photodetectors in advanced devices. [Display omitted] •Cu3N film preparation by in situ substrate heating during HiPIMS, later applied for UV photodetection.•Almost perfect stoichiometry of Cu3N obtained by in situ substrate heating during HiPIMS.•Substrate heating enhanced the crystallinity of Cu3N film due to the defects' reduction.•Single layer Cu3N with less defects and high crystallinity demonstrate outstanding photodetection performance.