Optical emission spectroscopy of lead sulfide films plasma deposition

In-situ Optical Emission Spectroscopy (OES) combined with quantum chemical calculations was used as a powerful tool to find out the exited reactive species existing in plasma discharge during the process of lead sulfide chalcogenide materials deposition. Low temperature nonequilibrium RF (40.68 MHz) plasma at low pressure (0.1 Torr) was employed for initiation of chemical interaction between precursors in the gas phase. Only high-pure elements were utilized as the initial substances. The ration between starting materials in the gas phase and power included into the plasma discharge were the variables. The mechanism of the plasma-chemical reaction was assumed and discussed. The stoichiometry and morphology of the surface of the as-deposited materials were studied by different analytical techniques. [Display omitted] •Plasma-chemical synthesis of lead sulfide thin films•Optical emission spectroscopy of the plasma process•Precise control of the deposition parameters•Comprehension of the mechanism of the reactions