Anomalous X-ray pulse responses in MAPbBr3 single crystal-based detectors

Organic-inorganic perovskite single crystals (SCs) are considered promising semiconductors for high-sensitivity X-ray detectors because of their strong X-ray interaction, low-temperature processability, and excellent properties such as long diffusion length, low defect density, and long carrier life...

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Veröffentlicht in:Radiation physics and chemistry (Oxford, England : 1993) England : 1993), 2024-08, Vol.221, p.111783, Article 111783
Hauptverfasser: Park, Beomjun, Ko, Juyoung, Byun, Jangwon, Pandey, Sandeep, Lee, Man-Jong
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Sprache:eng
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Zusammenfassung:Organic-inorganic perovskite single crystals (SCs) are considered promising semiconductors for high-sensitivity X-ray detectors because of their strong X-ray interaction, low-temperature processability, and excellent properties such as long diffusion length, low defect density, and long carrier lifetime. However, the specific pulse response of MAPbBr3 SC-based X-ray detectors frequently exhibits a tail and over/undershoots at several conditions, which degrades the X-ray image quality; however, no detailed analysis of these characteristics has been reported thus far. For high-resolution X-ray imaging, it is necessary to obtain an ideal pulse response that is free of tails and over/undershoots. In this study, we investigated the specific X-ray responses of solution-grown MAPbBr3 SC-based X-ray detectors under various externally applied voltages. Based on the study on charge carrier dynamics, we analyzed the origin of the tail and over/undershoots in X-ray pulse response shapes. We theoretically verified that the unideal pulse response in perovskite SC-based X-ray detectors is attributed to the defect states inherent in perovskite SCs. •X-ray responses of MAPbBr3 single-crystal detectors with different electrodes are investigated.•The specific pulse responses of the detectors show tail and over/undershoots.•Tail and overshoots can be interpreted as de-trapping and trapping, respectively, on shallow traps.•Undershoot is caused by diffusion currents due to the internal fields and unoccupied vacancies.
ISSN:0969-806X
1879-0895
DOI:10.1016/j.radphyschem.2024.111783