Tuning of binding energy, polarizability and photoionization cross-section of a hydrogenic impurity in CdTe/ZnTe core-shell nanostructure by the electric field and capped matrix

The current work describes in detail the effect of polarization charges on the electronic properties of core/shell spherical quantum dots (CSQDs) structures composed of CdTe/ZnTe semiconductors. In the calculations, energy levels and wave functions matching these levels were calculated by using the effective mass approach (EMA). Furthermore, the binding energy of a hydrogenic impurity was calculated under the variational approach. The matrix effects surrounding the CSQDs structure, the quantum dot size, the impurity, and how the applied external electric field affects the impurity binding energy (Eb), polarizability (Pa) and photoionization cross-section (PICS) are calculated and discussed in detail. The obtained results revealed that the Eb, the PICS and Pa are not only affected by the quantum parameter size but also by the capped matrix, the impurity and external electric field EF actions. •Ground state binding energy in CdTe/ZnTe CSSQD.•Stark shift and polarizability have been studied under the effects of the electric field and the surrounding matrix.•Peaks of photoionization cross-section experienced a red shift with the appropriate dielectric environment.