Magneto-transport properties in fcc ytterbium

•Transverse magnetoresistance and Hall resistivity measurements in face-centered cubic (fcc) ytterbium.•Evaluation of the level of electron-hole compensation in fcc ytterbium.•The positive Hall coefficient in fcc ytterbium can be interpreted by carrier densities and mobilities. Electron-hole compensation in a heavy rare-earth, ytterbium (Yb), was investigated by room-temperature galvanomagnetic measurements and a two-band model analysis. Face-centered cubic (fcc) Yb films were prepared by a molecular-beam technique. Transverse magnetoresistance (MR) and Hall resistivity (HR) measurements were performed on the fcc Yb film at room temperature. Transverse MR showed a quadratic behavior under magnetic fields up to ±5 T, whereas the HR had linear characteristics and a positive Hall coefficient. The experimental results are quantitatively explained by a two-band model with nearly identical carrier density (∼1×1021 cm−3) and mobility (∼70–80 cm2 V−1 s−1) of electrons and holes. The positive Hall coefficient observed is explained by a slightly greater hole density and/or mobility compared with those of electrons.