Investigation of laser modulated thermoelectric power of chiral carbon nanotubes

We investigated laser modulated thermopower in chiral carbon nanotubes. This was achieved by solving the Boltzmann transport equation with energy dispersion relation obtained in the tight-binding approximation. Analytical expressions were obtained for the differential thermoelectric power (α) along the axial (αzz) direction of the nanotubes. We have also noted that laser intensities above a threshold value of 4.6 × 107 V/m lower the thermopower, otherwise there is no substantial change. Varying the real overlapping integrals for jumps along the nanotube axis (Δz) and base helix (Δs) changes the thermopower from a positive to negative type. Our results suggest the possibility of on-demand tuning of the electronic and thermoelectric properties of single wall nanotubes (SWNTs) in the presence of a laser source. •Laser modulated thermopower of chiral carbon nanotubes has been studied using semi-classical Boltzmann's transport equation.•Below threshold laser intensity of 4.6 × 107 V/m, thermopower of nanotubes increases with increasing intensity of the applied laser field.•Under some unique conditions, nanotubes behave as either n-type or p-type semiconductors.•Laser induced on-demand tuning of electronic and thermoelectric properties of nanotubes for optoelectronic applications is possible.