Spin-valley coupled thermoelectric energy converter with strained honeycomb lattices

A caloritronic device setup is proposed that harnesses the intrinsic spin-valley locking of two-dimensional honeycomb lattices with graphene-like valleys, for instance, silicene and stanene. Combining first-principles and analytic calculations, we quantitatively show that when sheets of such materia...

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Veröffentlicht in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2020-04, Vol.118, p.113862, Article 113862
Hauptverfasser: Sengupta, Parijat, Rakheja, Shaloo
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Sprache:eng
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Zusammenfassung:A caloritronic device setup is proposed that harnesses the intrinsic spin-valley locking of two-dimensional honeycomb lattices with graphene-like valleys, for instance, silicene and stanene. Combining first-principles and analytic calculations, we quantitatively show that when sheets of such materials are placed on a ferromagnetic substrate and held between two contacts at different temperatures, an interplay between the electron degrees-of-freedom of charge, spin, and valley arises. A manifestation of this interplay are finite charge, spin, and valley currents. Uniaxial strain that adjusts the buckling height in silicene-type of lattices, in conjunction with an applied electric field, is shown to further modulate the aforementioned currents. We link these calculations to a Seebeck-like thermopower generator and obtain expressions (and means to optimize them) for two spin-valley polarized performance metrics — the thermodynamic efficiency and thermoelectric figure of merit. A summary outlines possible enhancements to presented results through the inherent topological order and substrate-induced external Rashba spin–orbit coupling that exists in silicene-type materials. •Energy harvesting the excess heat in a miniaturized chip.•Harness the unique correlation between mechanical strain and the electron degrees-of-freedom in monolayer honeycomb systems•Link the interplay of the spin-locked valleys, strain, and temperature gradient•Give rise to topological phase transitions for better thermal devices.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2019.113862