Effect of 8 MeV electron irradiation on indium doped Cu2SnS3 crystals

In this work, the effect of irradiation with electrons with an energy of 8 MeV on the surface topology, distribution of surface potentials, electronic structure, and Raman spectra of Cu2SnS3 samples doped with 4 % indium (CTS:In) were investigated. The CTS:In samples contain two crystal phases: tetragonal t-CTS and cubic c-CTS. The cubic c-CTS phase was deformed by electron irradiation. The grain structure modification on the surface of CTS:In under the influence of electrons and the disappearance of high positive potentials detected at the grain boundaries before irradiation were discovered. The peak associated with the InSn defects is shifted from +49 mV to +44 mV. This is related to the tearing out of indium atoms from site states of tin onto the surface of the CTS:In samples. This is confirmed by the study of the electronic structure of the CTS:In samples before and after irradiation.