Optimization of P-N junction diode using crack-free PbS thin films: The role of Y³⁺ doping via jet nebulizer spray pyrolysis

This study uses jet nebulizer spray pyrolysis for photodiode applications to prepare PbS films with varying Yttrium (Y) doping concentrations (0, 1, 3, and 5 wt%). XRD results reveal that Y-doped PbS films have a cubic structure, with grain size increasing as Y concentration rises, signifying successful Y incorporation into the PbS lattices. FESEM analysis shows the thin films have a triangular, nanostructured, crack-free surface. XPS confirms the presence of PbS, and Y. At the same time, optical studies indicate improved performance with Y doping, with the 3 % Y-doped film demonstrating outstanding photosensitivity (2895.21 %) and response of 208.33 mA/W, highlighting its potential for optoelectronic applications.