Electron-related properties in a GaAs/GaAlAs Ultra-thin Core/Shell Film through external field direction for energy and photonic devices

In this paper, we investigate electron-related properties in GaAs/GaAlAs Ultra-thin Core/Shell Film Quantum dot (UTFQD), examining the effects of external electric fields, impurity position, and aluminum fraction. Using the finite element method (FEM) within the effective mass approximation, we numerically solve the Schrödinger equation to study electron probability density, polarizability, and diamagnetic susceptibility. Our results reveal that electric fields can shift electron probability density due to the Stark effect. Without an electric field, the density centers near the shell's core. However, with electric fields, the density shifts opposite to the field's direction. Moreover, polarizability and diamagnetic susceptibility are influenced by impurity position and aluminum fraction. Polarizability increases with electric field intensity, indicating a transition from geometrical confinement to the Stark effect. Diamagnetic susceptibility rises with more aluminum, indicating stronger electron confinement. These findings suggest that adjusting electric fields, impurity position, and aluminum fraction in GaAs/GaAlAs core/shell QDs can control electron behavior, providing flexibility for photonic devices. This study offers a foundation for optimizing quantum dot-based components in photonics.