Raman study of directly synthetized graphene oxide films on Si, SiO2/Si and GaAs by remote-catalyzed CVD

Graphene oxide (GO) is an organic material with interesting properties for nanotechnology. Therefore, it is important to understand the processes that lead to its mass production for deposition onto large-size wafers and with high quality; as well as the control of the number of monolayers and the degree of oxidation. In this work, we propose an alternative method for measuring the oxidation degree of GO. We use simulated Raman spectra from different molecular models that, under computational calculations based on density functional theory (DFT), allow us to explain the measured Raman spectra and the approximate molecular structure of the material. In addition, we report on a methodology based on a process of remotely catalyzed chemical vapor deposition (CVD) to synthesize GO in millimeter areas directly onto three different substrates: SiO2/Si, Si, and GaAs. The results can be used to optimize the synthesis processes of GO and improving the performance of this organic material. [Display omitted] •Large-area Graphene Oxide (GO) films were synthesized using a homemade CVD system.•Different substrates directly receive the graphene oxide thin film.•A set of molecular models, under the DFT theory, is used to describe the line shape of the Raman spectrum.•Changes in both D and G bands depend on oxidation conditions, which helps to assess the planar structure.•μ-Raman potentiates the quality and reproducibility of the GO films.