Effect of electric field and acceptor position on the energy spectrum of GaAs/AlAs quantum dot

The spherical quantum dot (QD) with acceptor impurity in the external electric field has been considered. A multiband model of the valence band has been applied. Quantum Stark effect has been studied for hole levels in the QD. The influence of acceptor and electric field on hole-level splitting has...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2022-10, Vol.642, p.414106, Article 414106
Hauptverfasser: Bilynskyi, I.V., Leshko, R. Ya, Metsan, H.O., Slusarenko, M.A.
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Sprache:eng
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Zusammenfassung:The spherical quantum dot (QD) with acceptor impurity in the external electric field has been considered. A multiband model of the valence band has been applied. Quantum Stark effect has been studied for hole levels in the QD. The influence of acceptor and electric field on hole-level splitting has been defined. Those influences will change the optical parameters of QDs. •Multiband hole model has been applied for the quantum dot.•Hole energy spectra have been defined with regard to an acceptor position and electric field.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2022.414106