Optical resonance in the inversion n− channel of a silicon MOS structure

The features of the manifestation of the self-induced transparency (SIT) effect at intersubband resonance in the inversion n− layer of silicon semiconductor systems (in field-effect transistors (100)Si−MOSFET) are analyzed. The course of the interaction of ultrashort laser pulses with the quantum states of the inversion layer of the MOS structure varies, depending on the concentration of the induced charge, by changing the voltage across the metal gate. The evolution of a pulse in the transient stage of deformation as it propagates in a resonant medium of an inversion channel is discussed. Possible consequences for a non-degenerate one-photon resonance are considered, with controlled changes in the detuning between a fixed pulse frequency and the resonant energy of the intersubband transition, caused by changes in the charge density. The parametric dependence on the concentration of the induced charges in the “area theorem” for the propagation process in the inversion channel is revealed. •The features of the manifestation of the self-induced transparency effect at intersubbandresonance in the inversion n-layer of silicon semiconductor systems.•The course of the interaction of ultrashort laser pulses with the quantum states of the inversion layer of the MOS structure varies, depending on the concentration of the induced charge.•The evolution of a pulse in the transient stage of deformation as it propagates in a resonant medium of an inversion channel is discussed.•Possible for a non-degenerate one-photon resonance are considered, with controlled changes in the detuning between a pulse frequency and the energy of the intersubband transition, caused by changes in the charge density.•The parametric dependence on the concentration of the induced charges in.