Characterization of Ba–Sr thin films deposited by spray pyrolysis and fabrication of Ag/Ba–Sr/n-Si/Ag diodes

This study describes the synthesis of barium (Ba) and strontium (Sr) thin films using jet neublizer spray pyrolysis (JNSP) technology, which facilitates the fabrication of junction diodes whose structure, surface morphology, and optical properties are affected by significant water absorption. Ba–Sr films with different strontium concentrations (specifically 0, 2, 4 and 6 wt%) were further investigated to provide a better understanding of how this change affects the final diode type. The research design focuses on fabricating n-type silicon junction diodes containing barium and strontium and directly measuring and analyzing their I–V characteristics, ultimately helping elucidate these devices' electrical behavior. Among the analyzed diodes, the Ag/Ba–Sr/n-Si/Ag diode performed well in various design tests, indicating its competitiveness due to its goodness in optoelectronic devices. The ideal value (n) of a 6 wt% Ba–Sr diode is 1.77 and the barrier height (ΦB) is 0.84 eV. These results demonstrate the general future of Ba–Sr junction diode, as they not only reveal important discoveries regarding their electrical properties but also demonstrate the potential for improved performance in optoelectronic applications. [Display omitted] •A sensitive Ag/Ba–Sr/n-Si/Ag structured junction diode was efficaciously fabricated by JNSP process.•Strangely, UV–Vis analysis revealed a smaller band gap of 3.18 eV in samples heated at higher substrate temperatures.•Especially, 6 wt% Ba–Sr produced the best diode with n = 1.77 and ϕB = 0.84 eV.•To enhance diode performance, a high dielectric material can be introduced in the fabrication of a p-n junction diode.