Impact of La doping on the optoelectronic and structural properties of CsPbIBr2 perovskite solar cell

Inorganic lead halide perovskite solar cells (IPSC) have high power conversion efficiency (PCE). Currently, heteroatom substitution is a promising method for enhancing the properties of perovskite materials and the performance of associated devices. This study outlines the production process of a perovskite solar cell made from inorganic CsPbIBr2 with a 4 % La doping. The cubic crystal structure with large grain size and small band gap energy is observed at 4 % La–CsPbIBr2. The optoelectronic and structural characteristics of CsPbIBr2 perovskite solar cells have been substantiated through various methodologies, such as the determination of space charge restricted current, examination of the photoluminescence decay profile, assessment of charge transfer resistance, and utilization of Mott Schottky analysis. The incorporation of lanthanum-doped cesium lead iodide bromide (La-doped CsPbIBr2) resulted in a notable enhancement in both the open circuit voltage (Voc), and the short circuit current density (Jsc), leading to a much higher overall efficiency of 9.89 % compared to the pristine counterpart, which exhibited an efficiency of 8.62 %.