Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing

6-MeV electrons irradiation of a nearly lattice-matched P-rich GaPAsN-on-GaP epilayer, grown by molecular beam epitaxy, and subsequent rapid thermal annealing at 650 °C are found to induce much stronger photoluminescence than what is observed for an identical as-grown sample annealed in similar conditions. At the same time, exciton localization at low temperatures decreased and alloys crystallinity improved as seen by power-dependent photoluminescence and Raman spectroscopy, respectively. These irradiation-related phenomena occurred without change in the alloy macroscopic composition as revealed by X-ray diffraction. •6-MeV electrons irradiation degrades photoluminescence from GaPAsN alloys•Photoluminescence increase seen in irradiated GaPAsN after rapid thermal annealing•No compositional change observed in irradiated alloys after the thermal treatment