Near-infrared electroluminescent device from Cr3+-doped β-Ga2O3 in metal-oxide-semiconductor structure

Near-infrared (NIR) light spectroscopy has been utilized generously in wide applications, especially for plant growth supplements. However, providing an NIR light-emitting device that has excellent thermal stability remains a formidable challenge, due to the inherent characteristics of semiconductor materials when exposed to temperature variations. Herein, we present our investigation on an NIR-emitting electroluminescent (EL) device based on a Cr3+-doped β-Ga2O3 fabricated on a silicon substrate. The β-Ga2O3 inherits excellent electrical properties that lead to satisfactory performance as an EL device. Due to the intermediate crystal field strength of incorporating Cr3+ ions in the β-Ga2O3 host, it emits both sharp and broadband spectrum attributed to the metal ions transition energy levels in the octahedral site. The dependence of EL spectroscopy on applied voltages, frequencies, and temperatures is investigated. The results revealed acceptable performance and thermal stability that are potentially used in harsh environmental conditions. •A near-infrared electroluminescent (NIR-EL) device is presented from a Cr3+-doped β-Ga2O3 film on the silicon substrate.•The Cr3+ ions are incorporated in the β-Ga2O3 host in intermediate crystal field strength.•The NIR-EL device attained 1.64 mW/cm2 power density and 1.55 % power efficiency.•It has decent thermal stability, maintaining 60 % at 80 °C.