Near infrared-II light-emitting devices based on Er-doped Ga2O3 films

Near-infrared (NIR) light in the 1000–1700 nm region (NIR-II) is emerging as one of the most promising deep bioanalytical techniques due to its ability to penetrate living tissues more deeply than the NIR light in the 700–900 nm region (NIR-I). In this work, we report on the NIR-II light-emitting devices (LEDs) based on Er–Ga2O3 films. The emissions observed at 980 and 1535 nm can be assigned to the 4I11/2-4I15/2 and 4I13/2-4I15/2 transitions, respectively. The turn-on voltage of the NIR-II LEDs is 10.9 V. Indirect energy transfer is the dominant excitation mechanism in this device. This work opens a pathway for integrating Ga2O3-based LEDs with mainstream Si technology, enabling various NIR-II applications. •Near-infrared-II light-emitting devices based on Er–Ga2O3 films were fabricated.•Two electroluminescence emissions can be observed at 980 nm and 1535 nm.•The turn-on voltage of Near-infrared-II light-emitting devices is 10.9 V.