Photo-resistor applications of Bi:ZnSe nano-composition deposited on micro-glass

Bi:ZnSe films at different concentrations (0, 5, 10, and 15%) were made by the laser deposition technique. The scanning electron microscopy and Uv–visible spectroscopy were used to investigate the surface topography and optical properties of the prepared films, respectively. The calculated energy gap was (3.0, 2.6, 3.2, and 3.1 eV) due to differences in lattice parameters. Moreover, the electrical characteristics reveal enhanced dark current with all samples probably due to the essential property of p-type doped ZnSe Nano-composition. The density, refractive index, permittivity, and reflection loss were also studied versus Bi-dopant. The structural characteristics of the coated films have been tested by an X-ray diffractometer. In addition, the interstitial or substitutional Zn ion by Bi ion in the lattice was also explained in this paper. [Display omitted] •Bi:ZnSe Nano-composites have been deposited using laser technique.•Structural characteristics showed peak shifts to lower and higher angles due to substitution and interstitial bismuth dopant with zinc site.•The higher obtained Eg was belonging to Bi0.10Zn0.90Se probably due to the size effect of the nanoparticles.•A negative photo current was detected for the Bi:ZnSe due to films surfaces effects resulting from photo-absorption and desorption of oxygen atoms in the air.