Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN

In this work, we have performed and analyzed a nanometric layer of InxGa1-xN to be used on a photodetector by the high fluence low energy In + ion implantation into GaN. Secondary ion mass spectrometry (SIMS) elemental analysis revealed a maximal In concentration around 1021 cm−3 for a fluence and energy of 4.48 × 1016 cm−2 and 50 keV respectively. After annealing, the implanted sample showed strong red shift photoluminescence centered at 2.1eV. Photoluminescence was attributed to the formation of InxGa1-xN nanocrystals with high In content around 42%. The formation of InxGa1-xN due to implantation of In + ions was demonstrated by Raman, X-ray photoelectron spectroscopy (XPS), photo-reflectance, and photoluminescence. Furthermore, the nanostructured material was used to fabricate a Schottky photo-diode with a leakage current about 4 × 10−8 A. •After annealing, the implanted sample showed photoluminescence below the GaN bandgap centered at 2.1eV. Explained by the formation of InxGa1-xN nanoclusters with high In content around 42%.•SIMS elemental analysis demonstrated after implantation a maximal In concentration around 1021cm−3 for a fluence and energy of 4.48 × 1016cm−2 and 50 keV, respectively.