Impact of nonlinear electron transport model on character of light propagation in photorefractive semiconductors

•An analysis of nonlinear light propagation in photorefractive semiconductors in frame of two methods of nonlinear electron transport modelling.•Demonstration of the possibility of self-trapping of optical beams.•Demonstration of the possibility of self-bending of optical beams.•An analysis of the impact of the optically induced charge domain oscillation on light propagation. The paper presents an analysis of nonlinear light propagation in photorefractive gallium arsenide. Two methods of nonlinear electron transport modelling have been distinguished, differentiated by the curve representing the dependence of electron drift velocity on the electric field. It has been shown that the phenomena of self-trapping of optical beams and the effect of bending of beam trajectories are possible both within the model for which the electron drift curve does not pass a local minimum, as in the case when the existence of a local minimum is taken into account. Since the model without a local minimum allows the excitation of charge carrier domains oscillations, the impact of this phenomenon on light propagation has been analysed. It has been shown that the oscillations have a limiting effect on the time window in which effective self-trapping of light occurs, and that they can manifest themselves in the form of oscillations in the intensity of the optical beam.