3-D temperature measurement of transient plasma during semiconductor bridge electroburst with high-speed interferometry

•Successful combination of interferometry and high-speed photography.•First real-time and complete recording of the electroburst of a semiconductor bridge(SCB).•Three-dimensional imaging of transient fields.•Spatial characteristics of plasma generated by SCB satisfy axisymmetric dist-ribution. A hig...

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Veröffentlicht in:Optics and lasers in engineering 2024-10, Vol.181, p.108447, Article 108447
Hauptverfasser: Lu, Yuyan, Guo, Rongli, Wang, Jia, Li, DangJuan, Wu, Shengjiang
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Sprache:eng
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Zusammenfassung:•Successful combination of interferometry and high-speed photography.•First real-time and complete recording of the electroburst of a semiconductor bridge(SCB).•Three-dimensional imaging of transient fields.•Spatial characteristics of plasma generated by SCB satisfy axisymmetric dist-ribution. A high-speed technique for three-dimensional (3-D) imaging of dynamic transient temperature field using single-shot off-axis interferometry is proposed. The sequence of interferograms, which contain temperature parameters of plasma, is obtained with using a Mach-Zender interferometer system and high-speed photography. The interferograms were processed using the Fourier transform and the Abel algorithm, to extract the refractive index distribution. Subsequently, the radial and 3-D distribution of temperature were derived with G-D equation. In experiments, transient process less than 100μs during plasma electroburst was successful captured at a frame rate of 3 × 106 fps. The 3-D temperature and its variations during the whole process in a SCB ignition was clearly revealed for the first time.
ISSN:0143-8166
1873-0302
DOI:10.1016/j.optlaseng.2024.108447