A universal gain theory of the multiplying layer in EBCMOS based on elastic and inelastic scattering

A universal gain theory of the multiplying layer in electron bombardment complementary metal oxide semiconductor imaging device based on elastic and inelastic scattering is investigated by using Monte Carlo simulation method. The influence of the incident electron energy, the doping concentration in the P-type substrate layer, the radiation flux and the passivation layer thickness on the charge collection efficiency and the gain of the multiplying layer are analyzed theoretically. The results show that the gain in the case of the universal electron stopping power (SP) is lower than that in the case of the Bethe SP, which is more consistent with the actual device gain performance. In addition, increasing the incident electron energy, reducing the passivation layer thickness and irradiation flux, and decreasing the doping concentration are beneficial ways to increase the charge collection efficiency and gain of the electron multiplying layer.