Characterization of Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array at different temperatures with CAEN DT5202

Characterization of Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array at different temperatures with CAEN DT5202

Silicon PhotoMultipliers, SiPMs, constitute the enabling technology for a diverse and rapidly growing range of applications: medical imaging, experimental physics, and commercial applications are only a few examples. In this work, a characterization protocol for SiPM qualification has been applied t...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2023-12, Vol.1057, p.168732, Article 168732
Hauptverfasser: Persiani, R., Lombardo, C., Millesoli, S., Tortorici, F., Albergo, S., Cappuzzello, F., Caruso, R., Petta, C.M.A., Tuvè, C.
Format: Artikel
Sprache:eng
Schlagworte:
Breakdown voltage
Dark count rate
Gain
Probability of cross-talk
Quenching resistance
SiPM characterization
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Zusammenfassung:Silicon PhotoMultipliers, SiPMs, constitute the enabling technology for a diverse and rapidly growing range of applications: medical imaging, experimental physics, and commercial applications are only a few examples. In this work, a characterization protocol for SiPM qualification has been applied to Hamamatsu S13161-3050AE-08 SiPM (8 × 8) array in the (−40 ÷ ＋30) °C temperature range. The protocol foresees to measure several parameters: breakdown voltage, quenching resistance, gain, dark count rate and probability of cross-talk. Methods to extract them and their dependence on temperature at fixed overvoltage are shown and the results are discussed.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2023.168732